High-mobility, sputtered films of indium oxide doped with molybdenum
Identifieur interne : 00A676 ( Main/Repository ); précédent : 00A675; suivant : 00A677High-mobility, sputtered films of indium oxide doped with molybdenum
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Abstract
Thin films of molybdenum-doped indium oxide, an n-type transparent conducting oxide, were deposited on glass substrates by a large-area deposition technique, radio-frequency magnetron sputtering, and their electrical properties were examined. Molybdenum content was varied from 1 to 4 wt%, and the highest mobility achieved was 83 cm2V-1s-1 at a carrier concentration of 3.0×1020 cm-3 without any postdeposition treatment for one of the films made from the target with 2 wt% Mo. Temperature-dependent Hall analysis indicated that this high mobility is limited by phonon scattering, whereas the method of four coefficients analysis showed that the conduction band is parabolic. © 2004 American Institute of Physics.
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Wood</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Colorado School of Mines, Golden, Colorado 80401</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>Department of Physics, Colorado School of Mines, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Gessert, Timothy A" uniqKey="Gessert T">Timothy A. Gessert</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Coutts, Timothy J" uniqKey="Coutts T">Timothy J. Coutts</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0132808</idno><date when="2004-03-22">2004-03-22</date><idno type="stanalyst">PASCAL 04-0132808 AIP</idno><idno type="RBID">Pascal:04-0132808</idno><idno type="wicri:Area/Main/Corpus">00BC99</idno><idno type="wicri:Area/Main/Repository">00A676</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier relaxation time</term><term>Experimental study</term><term>Hall mobility</term><term>Indium compounds</term><term>Molybdenum</term><term>Semiconductor thin films</term><term>Sputter deposition</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6855A</term><term>7350G</term><term>7361L</term><term>7350J</term><term>8115C</term><term>8105H</term><term>Etude expérimentale</term><term>Indium composé</term><term>Dépôt pulvérisation</term><term>Mobilité Hall</term><term>Temps relaxation porteur charge</term><term>Couche mince semiconductrice</term><term>Molybdène</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Molybdène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Thin films of molybdenum-doped indium oxide, an n-type transparent conducting oxide, were deposited on glass substrates by a large-area deposition technique, radio-frequency magnetron sputtering, and their electrical properties were examined. Molybdenum content was varied from 1 to 4 wt%, and the highest mobility achieved was 83 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup> at a carrier concentration of 3.0×10<sup>20</sup> cm<sup>-3</sup> without any postdeposition treatment for one of the films made from the target with 2 wt% Mo. Temperature-dependent Hall analysis indicated that this high mobility is limited by phonon scattering, whereas the method of four coefficients analysis showed that the conduction band is parabolic. © 2004 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>High-mobility, sputtered films of indium oxide doped with molybdenum</s1></fA08><fA11 i1="01" i2="1"><s1>YOSHIDA (Yuki)</s1></fA11><fA11 i1="02" i2="1"><s1>WOOD (David M.)</s1></fA11><fA11 i1="03" i2="1"><s1>GESSERT (Timothy A.)</s1></fA11><fA11 i1="04" i2="1"><s1>COUTTS (Timothy J.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Colorado School of Mines, Golden, Colorado 80401</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>2097-2099</s1></fA20><fA21><s1>2004-03-22</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0132808</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Thin films of molybdenum-doped indium oxide, an n-type transparent conducting oxide, were deposited on glass substrates by a large-area deposition technique, radio-frequency magnetron sputtering, and their electrical properties were examined. Molybdenum content was varied from 1 to 4 wt%, and the highest mobility achieved was 83 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup> at a carrier concentration of 3.0×10<sup>20</sup> cm<sup>-3</sup> without any postdeposition treatment for one of the films made from the target with 2 wt% Mo. 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